2N2222 NPN Transistor

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Specifications:

Transistor Type: NPN
Collector-Emitter Voltage (VCE): 40V
Collector-Base Voltage (VCB): 75V
Emitter-Base Voltage (VEB): 6V
Maximum Collector Current (IC): 800mA
DC Current Gain (hFE): 35 – 300
Power Dissipation (Ptot): 500mW
Transition Frequency (ft): 250 MHz
Mounting Type: Through-Hole (TO-92 Package)

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Description
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The 2N2222 is a widely used NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. It is known for its fast switching speed, low saturation voltage, and reliability, making it a favorite among electronics enthusiasts and professionals.

Features:

✔ NPN Silicon BJT Transistor
✔ Low Saturation Voltage (VCE(sat))
✔ High-Speed Switching Capability
✔ Collector Current (IC) up to 800mA
✔ DC Current Gain (hFE) of 35 to 300 mA
✔ Maximum Collector-Emitter Voltage: 7V
✔ Ideal for Switching & Amplification

Applications:

🔹 General-Purpose Switching
🔹 Signal Amplification
🔹 Logic Circuits
🔹 Motor Drivers
🔹 Relay Driving Circuits
🔹 RF and Low-Noise Applications

Package Includes:

📦 20 x 2N2222 NPN Transistors